Self-Isolated Transistor Structures of Bipolar Integrated Circuits

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概要

• 論文の詳細を見る

• Self-isolated transistor structures for bipolar integrated circuits are proposed. Some of the advantageous features of the proposed structures are; negligible minority carrier storage in collector region, low collector series resistance and large currernt handling capability, high packing density, and ease of processing. Cutoff frequency of about 600 MHz was observed for the graded base structure, and about 400 MHz for the uniform base structure. It is also shown that the current handling capability is improved. Epitaxial growth is one of the critical steps in producing self-isolated bipolar integrated circuits. A discussion is given for the specification of the epitaxial layer. In order to minimize the back diffusion from the buried layer to the base, a new possible way of processing is proposed which makes use of the simultaneous diffusion of Ga, As, and P.

• 社団法人応用物理学会の論文
• 1970-07-05

著者

• Maki Michiyoshi

  Central Research Laboratory Hitachi Ltd.

• MAKIMOTO Tsugio

  Musashi Works of Hitachi, Ltd.

• SUGAWARA Katsuro

  Musashi Works of Hitachi, Ltd.

• Makimoto Tsugio

  Musashi Works Of Hitachi Ltd.

• Sugawara Katsuro

  Musashi Works Of Hitachi Ltd.

関連論文

• Evaluation of Temperature Distribution of Melt in Silicon Ribbon Growth
• Observations of Channels of MOS Field Effect Transistors Using a Scanning-Electron Microscope
• X-Ray Topographic Study of Lattice Defects Related with Degradation of GaAs-Ga_Al_xAs Double-Heterostructure Lasers : B-7: SEMICONDUCTOR LASERS (II)
• Self-Isolated Transistor Structures of Bipolar Integrated Circuits
• Causes of Thickness Non-Uniformity in Silicon Ribbon Crystals

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