Equilibrium Computation for the Vapor Growth of In_xGa_<1-x>P Crystals

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概要

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• The equilibrium computation for the vapor growth of In_xGa_<1-_x>P is carried out by a new and simpler computation method developed for the solution of nonlinear algebraic equations. The partial pressures of gaseous species in equilibrium with In_xGa_<1-_x>P alloys are calculated for various parameters by using this method. It is shown that the principal species in gas phase are InCl, GaCl, P_4, P_2 and HCl in addition to H_2 and that some of the features of the experimental results reported in the literature can be predicted by the equilibrium model.

• 社団法人応用物理学会の論文
• 1972-06-05

著者

• Minagawa Shigekazu

  Central Research Laboratory Hitachi Lid.

• Minagawa Shigekazu

  Central Research Laboratory Hitachi Ltd.

• SEIKI Hisashi

  Faculty of Technology, Tokyo University of Agriculture and Technology

• Seiki Hisashi

  Faculty Of Technology Tokyo University Of Agriculture And Technology

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