OMVPE of Gallium Arsenide Using an Adduct Compound
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概要
- 論文の詳細を見る
Organometallic vapor phase epitaxial (OMVPE) growth of gallium arsenide was conducted by making use of the reaction between an adduct compound : trimethygallium triethylphosphine and arsine. Characteristics of this growth process and the grown crystals were described in terms of growth rate, surface morphology, carrier concentration, electron mobility and photoluminescence spectra at 4 K. The highest mobilities obtained so far were 7000 cm^2/(Vs) at 300 K and 47000 cm^2/(Vs) at 77 K. The lowest carrier concentration was 5×10^<14> cm^<-3>.
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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NAKAMURA Hitoshi
Central Research Laboratory, Hitachi, Ltd.
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Minagawa Shigekazu
Central Research Laboratory Hitachi Lid.
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Minagawa Shigekazu
Central Research Laboratory Hitachi Ltd.
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SANO Hisumi
Central Research Laboratory, Hitachi, Ltd.
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Sano Hisumi
Central Research Laboratory Hitachi Ltd.
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Nakamura Hitoshi
Central Research Laboratory Hitachi Ltd.
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