Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-12-01
著者
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KOVSH Alexey
A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences
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Chen J‐f
National Chiao Tung Univ. Hsinchu Twn
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Chen Jenn-fang
Department Of Electrophysics National Chiao Tung University
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Wei L
Institute Of Materials Science University Of Tsukuba
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Kovsh Alexey
A. F. Ioffe Physico Technical Institute
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Wang Jenn-shing
Department Of Materials Science And Engineering National Cheng-kung University
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HSIAO Ru-Shang
Department of Electrophysics, National Chiao Tung University
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WANG Jyh-Shyang
Department of Physics, Chung Yuan Christian University
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CHI Jim-Y
Industrial Technology Research Institute (OES/ITRI)
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LIN Kun-Feng
Industrial Technology Research Institute
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WEI Li
Industrial Technology Research Institute
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LIU Hui-Yu
Industrial Technology Research Institute
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LIANG Chiu-Yueh
Industrial Technology Research Institute
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LAI Chih-Ming
Industrial Technology Research Institute
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MALEEV Nikolay
A. F. Ioffe Physico Technical Institute
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Hsiao Ru-shang
Department Of Electrophysics National Chiao Tung University
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Wang Jyh-Shyang
Department of Physics and Center of Nanotechnology, Chung-Yuan Christian University, 200 Chung Pei Road, Chungli 320, Taiwan
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