Observation of a Dominant EL2-like Mid-Gap Trap in In_<0.12>Ga_<0.88>As/GaAs Suuperlattice Grown at Low Temperature by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-11-15

著者

• Chen Jenn-fang

  Department Of Electrophysics National Chiao Tung University

• Wang P‐y

  National Chiao Tung Univ. Hsinchu Twn

• Wang Pai-yong

  Department Of Electrophysics National Chiao Tung University

• Wong Hong-zheng

  Department Of Electrophysics National Chiao Tung University

• Wang Jiin-shung

  Department Of Electrophysics National Chiao Tung University

• WANG Pie-Yong

  Department of Electrophysics, National Chiao Tung University

• Wang Pie-yong

  Department Of Electrophysics National Chiao Tung University

関連論文

• Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation
• Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
• Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
• Voltage and Frequency Dependence of Differential Capacitance in Relaxed In_Ga_As/GaAs Schottky Diodes
• Admittance Spectroscopy and Thermal Stimulation Current for Band-Offset Characteristics in AlAs/GaAs n^+-p Structures
• Capacitance Dispersion in n-LT-i-p GaAs Structures with the Low-Temperature Layers Grown at Different Temperatures
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Observation of a Dominant EL2-like Mid-Gap Trap in In_Ga_As/GaAs Suuperlattice Grown at Low Temperature by Molecular Beam Epitaxy
• Deep Levels in SnTe-Doped GaSb Grown on GaAs by Molecular Beam Epitaxy
• Electrical Properties of Undoped and SnTe-Doped Ga_xIn_Sb Molecular-Beam-Epitaxially Growm on GaAs
• Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States : The Influence of Illuminance (Special Issue : Solid State Devices and Materials (1))
• Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
• Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor
• Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
• Effect of Nitrogen Incorporation into InAs layer in InAs/InGaAs Self-Assembled Quantum Dots
• Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
• High-Efficiency Organic Electroluminescent Device with Multiple Emitting Units
• Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy

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