Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
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概要
- 論文の詳細を見る
Detailed admittance spectroscopy was performed on a metal–silicon nitride–hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under various operating conditions (accumulation, depletion and full depletion) are presented along with an alternative direct measurement method at room temperature. Admittance spectroscopy shows that the interface states density between silicon nitride (SiNx) and a-Si:H can be determined from the depletion equivalent circuit model. The resisivity and activation energy of a-Si:H can also be obtained using the accumulation and depletion equivalent circuit models. These models can be employed easily to monitor the fabrication parameters of thin-films transistors (TFTs) and to accurately and directly obtain the capacitance model parameters of TFTs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-12-25
著者
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Chen Jenn-fang
Department Of Electrophysics National Chiao Tung University
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Zan Hsiao-wen
Department Of Photonics And Institute Of Electro-optical Engineering And Display Institute National
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Yen Kuo-Hsi
Department of Photonics and Institute of Electro-Optical Engineering and Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China
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Hsieh Ming-Ta
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
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Chen Jenn-Fang
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
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Chang Chan-Ching
AU Optronics Corporation, Technology Center, Hsinchu, Taiwan 300, Republic of China
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Chen Chih-Hsien
AU Optronics Corporation, Technology Center, Hsinchu, Taiwan 300, Republic of China
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Shih Ching-Chieh
AU Optronics Corporation, Technology Center, Hsinchu, Taiwan 300, Republic of China
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Lee Yeong-Shyang
AU Optronics Corporation, Technology Center, Hsinchu, Taiwan 300, Republic of China
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Lee Yeong-Shyang
AU Optronics Corporation, Hsin-Chu, Taiwan, R.O.C.
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Zan Hsiao-Wen
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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