Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-07-15

著者

• Chen J‐f

  National Chiao Tung Univ. Hsinchu Twn

• Chen Jenn-fang

  Department Of Electrophysics National Chiao Tung University

• Chen Yu-chih

  Department Of Electrophysics National Chiao Tung University

• Hsieh Pei-chen

  Department Of Electrophysics National Chiao Tung University

• Wang Jenn-shing

  Department Of Materials Science And Engineering National Cheng-kung University

• HSIAO Ru-Shang

  Department of Electrophysics, National Chiao Tung University

• WANG Jyh-Shyang

  Department of Physics, Chung Yuan Christian University

• CHI Jim-Y

  Industrial Technology Research Institute (OES/ITRI)

• Hsiao Ru-shang

  Department Of Electrophysics National Chiao Tung University

• Wang Jyh-Shyang

  Department of Physics and Center of Nanotechnology, Chung-Yuan Christian University, 200 Chung Pei Road, Chungli 320, Taiwan

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