Experiments and Simulation of Spectrally-Resolved Static and Dynamic Properties in Quantum Dot Two-State Lasing
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the spectrally-resolved static and dynamic properties of quantum-dot lasers. The ground-state quenching and abnormal turn-on delay in quantum-dot two-state lasing behaviors are systematically studied. We found that the more saturated ground-state gain would quench ground-state emission more easily and result in the abnormal turn-on delay. Using a rate-equation model, we have successfully simulated such phenomena by considering the current heating effect.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-03-25
著者
-
WANG Jyh-Shyang
Department of Physics, Chung Yuan Christian University
-
Mao Ming-Hua
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.
-
Wu Der-Chin
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.
-
Su Li-Chieh
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan, R.O.C.
-
Lin Yen-Chih
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C.
-
Lin Gray
Nanophotonics Center, OES/ITRI, Hsinchu 300, Taiwan, R.O.C.
-
Chi Jim-Y
Nanophotonics Center, OES/ITRI, Hsinchu 300, Taiwan, R.O.C.
-
Lin Gray
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
-
Wang Jyh-Shyang
Department of Physics, Chung Yuan Christian University, Taoyuan 200, Taiwan, R.O.C.
-
Wang Jyh-Shyang
Department of Physics and Center of Nanotechnology, Chung-Yuan Christian University, 200 Chung Pei Road, Chungli 320, Taiwan
関連論文
- Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation
- Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
- Highly Strained InGaAs/GaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers
- Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
- Optical and Electrical Characterizations of ZnMnO Thin Films on $c$-Al2O3
- Experiments and Simulation of Spectrally-Resolved Static and Dynamic Properties in Quantum Dot Two-State Lasing
- Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
- Characteristics of Cross-Shaped Polarization-Switching Vertical-Cavity Surface-Emitting Lasers for Dual-Channel Communications
- Effect of Nitrogen Incorporation into InAs layer in InAs/InGaAs Self-Assembled Quantum Dots