Highly Strained InGaAs/GaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers
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概要
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We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
- 2007-06-25
著者
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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LAI Fang-I
Institute of Electro-Optical Engineering, National Chiao-Tung University
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Kuo Hao-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
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Lin Gray
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Chi Jim
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Yang Hung-Pin
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Hsu I-Chen
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
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Chen I-Liang
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Lee Chen-Hong
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Chiou Chih-Hong
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Lee Tsin-Dong
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Lai Fang-I
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
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