Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode
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概要
- 論文の詳細を見る
In this study, a GaN-based alternating current light-emitting diode (AC-LED) with 34 numbers of microchips illuminated in each bias direction was fabricated. After calibrating the integration duration, the light output powers of the AC-LED driven by AC and DC were 388.1 and 312.8 mW when the input power was about 1 W, respectively. The flickering illumination mode of the AC-LED driven by AC decreased the heat accumulation and revealed a higher energy utilization efficiency than that of the AC-LED driven by DC. The larger blue shift and smaller full width at half maximum of the AC-LED driven by AC than those of the AC-LED driven by DC were also observed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-12-25
著者
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Kuo Hao-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Yen Hsi-Hsuan
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Yeh Wen-Yung
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, R.O.C.
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