Effect of Nitrogen Incorporation into InAs layer in InAs/InGaAs Self-Assembled Quantum Dots

スポンサーリンク

概要

• 論文の詳細を見る

• We present the results of nitrogen incorporation into the InAs layer in InAs/InGaAs quantum dots (QDs). We show that this incorporation causes an asymmetric photoluminescence (PL) line shape and abnormally large redshift of the PL peak from the quantum dots as temperature increases. In addition, this incorporation causes a large series resistance and a rapid increase in reverse current at a bias corresponding to the QD region. This effect is due to the formation of a deep trap at 0.34–0.41 eV, which depletes the carriers in the QD region. This depletion gives rise to a geometric resistance-capacitance time-constant effect for the ac conductivity of the free electrons in the top GaAs layer. This trap markedly alters the emission properties of the QD structure. The ac conductivity of the QD structure is governed by the thermal activation of trapped electrons rather than the electron emission from the QD confined states. This incorporation significantly increases the electron emission time from the QD region and, thus, can be used intentionally to modify the emission properties of the QD structure.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-09-15

著者

• Chen Jenn-fang

  Department Of Electrophysics National Chiao Tung University

• Chen Yu-chih

  Department Of Electrophysics National Chiao Tung University

• CHI Jim-Y

  Industrial Technology Research Institute (OES/ITRI)

• Hsiao Ru-shang

  Department Of Electrophysics National Chiao Tung University

• Chi Jim-Y

  Industrial Technology Research Institute (OES/ITRI), Hsinchu, Taiwan, R.O.C.

• Hsiao Ru-Shang

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Wang Jyh-Shyang

  Department of Physics, Chung Yuan Christian University, Chung-Li, Taiwan, R.O.C.

• Wang Jyh-Shyang

  Department of Physics and Center of Nanotechnology, Chung-Yuan Christian University, 200 Chung Pei Road, Chungli 320, Taiwan

• Hsieh Ming-Ta

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Chen Yi-Ping

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Hsieh Ming-Ta

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China

• Chen Jenn-Fang

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

• Chen Yu-Chih

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

関連論文

• Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation
• Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
• Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
• Voltage and Frequency Dependence of Differential Capacitance in Relaxed In_Ga_As/GaAs Schottky Diodes
• Admittance Spectroscopy and Thermal Stimulation Current for Band-Offset Characteristics in AlAs/GaAs n^+-p Structures
• Capacitance Dispersion in n-LT-i-p GaAs Structures with the Low-Temperature Layers Grown at Different Temperatures
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• 魚介類病原細菌とエビ血球に及ぼすセクロピンの影響
• Observation of a Dominant EL2-like Mid-Gap Trap in In_Ga_As/GaAs Suuperlattice Grown at Low Temperature by Molecular Beam Epitaxy
• Deep Levels in SnTe-Doped GaSb Grown on GaAs by Molecular Beam Epitaxy
• Analysis of the Envelope Proteins of Heat-Shocked Vibrio parahaemolyticus Cells by Immunoblotting and Biotin-Labeling Methods
• Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
• Electrical Properties of Undoped and SnTe-Doped Ga_xIn_Sb Molecular-Beam-Epitaxially Growm on GaAs
• Optical and Electrical Characterizations of ZnMnO Thin Films on $c$-Al2O3
• Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States : The Influence of Illuminance (Special Issue : Solid State Devices and Materials (1))
• Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
• Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor
• Experiments and Simulation of Spectrally-Resolved Static and Dynamic Properties in Quantum Dot Two-State Lasing
• Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
• Effect of Nitrogen Incorporation into InAs layer in InAs/InGaAs Self-Assembled Quantum Dots
• Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
• High-Efficiency Organic Electroluminescent Device with Multiple Emitting Units
• Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy

もっと見る 閉じる

スポンサーリンク