Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-07-01

著者

• Chen Jenn-fang

  Department Of Electrophysics National Chiao Tung University

• FENG Ming-Shiann

  Institute of Materials Science and Engineering, National Chiao Tang Universit

• CHEN Nie-Chuan

  Department of Electrophysics, National Chiao-Tung University

• LEE Wei-I

  Department of Electrophysics, and Microelectronics and Information Systems Research Center, National

• Lee Wei-i

  Department Of Electrophysics National Chiao Tung University

• Lee Wei-i

  Department Of Electrophysics And Microelectronics And Information Systems Research Center National C

• Chen Nie-chuan

  Department Of Electrophysics National Chiao Tung University

• HUANG Wen-Yen

  Department of Electrophysics, National Chiao Tung University

• Huang Wen-yen

  Department Of Electrophysics National Chiao Tung University

• Feng Ming-shiann

  Institude Of Materials Science And Engineering National Chiao Tung University

• Chen Nie-Chuan

  Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China

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