Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors
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概要
- 論文の詳細を見る
The microcrystallinity of hydrogenated amorphous silicon films deposited by the conventional radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on chamber pressure are discussed. In a wide range of pressure at which the microcrystalline film can be formed, a critical pressure (500 mT) is found. Films deposited at this critical pressure possess the highest crystalline volume fraction and the smallest grain size. An ion-bombardment-assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin-film transistors (TFTs), the subthreshold swing and the field effect mobility are studied, both of which are found to be smaller than those of the hydrogenated amorphous silicon (a-Si:H) TFTs.
- 社団法人応用物理学会の論文
- 1995-11-15
著者
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Chiang Wen-chuan
Institute Of Materials Science And Engineering And National Nano Device Laboratory National Chiao-tu
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Feng Ming-shiann
Institude Of Materials Science And Engineering National Chiao Tung University
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LIANG Chia-Wen
Institute of Electronics, and National Nano Device Laboratory, National Chiao-Tung University
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Feng Ming-shiann
Institute Of Materials Science And Engineering And National Nano Device Laboratory National Chiao-tu
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Liang Chia-wen
Institute Of Electronics And National Nano Device Laboratory National Chiao-tung University
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