Investigation of Carrying Agents on Microstructure of Electroplated Cu Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-11-15

著者

• Chang Shih-chieh

  Institute Of Materials Science And Engineering National Cliiao Tang University

• Dai B‐t

  National Nano Device Lab. Hsinchu Twn

• Dai Bau-tong

  National Nano Device Laboratories

• Dai Bau-tong

  National Nano Device Lab.

• SHIEH Jia-Min

  National Nano Device Laboratories

• FENG Ming-Shiann

  Institute of Materials Science and Engineering, National Chiao Tang Universit

• FENG Ming-Shiana

  Institute of Materials Science and Engineering, National Chiao Tung University

• Shieh Jia-ming

  National Nano Device Laboratories

• Feng M‐s

  Institute Of Materials Science And Engineering National Cliiao Tang University

• Chang Shih-Chieh

  Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.

関連論文

• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Pattern Effects on Planarization Efficiency of Cu Electropolishing
• Investigation of Carrying Agents on Microstructure of Electroplated Cu Films
• Investigation of Superfihling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization
• Microwave Heating for the Preparation of Nanometer Gold Particles
• Synthesis of Nanometer-Sized Poly (methyl methacrylate) Polymer Network by Gold Nanoparticle Template
• Plasma Treatment and Dry Etch Characteristics of Organic Low-k Dielectrics
• Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects
• Charging Damages to Gate Oxides in a Helicon O_2 Plasma
• Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
• Effects of Polysilicon Electron Cyclotron Resonance Etching on Electrical Characteristics of Gate Oxides
• Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
• A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Films in a Short Duration
• Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
• Optical Nonlinearity and Ultrafast-Carrier Dynamics of a Strained Quantum-Well Saturable Bragg Reflector
• Integration of Modified Plasma-Enhanced Chemical Vapor Deposited Tetraethoxysilane Intermetal Dielectric and Chemical-Mechanical Polishing Processes for 0.35 μm IC Device Reliability Improvement
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Raman Scattering of Se-Doped Gallium Nitride Films
• Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
• Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
• Optical Nonlinearity and Ultrafast-Carrier Dynamics of a Strained Quantum-Well Saturable Bragg Reflector
• Aging Influence of Poly(ethylene glycol) Suppressors of Cu Electrolytes on Gaps Filling
• Microwave Heating for the Preparation of Nanometer Gold Particles
• Synthesis of Nanometer-Sized Poly (methyl methacrylate) Polymer Network by Gold Nanoparticle Template
• Low Temperature Synthesis of Single Crystalline Silicon Nanowires Using Anodic Aluminum Oxide Template

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