Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization

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概要

• 論文の詳細を見る

• In this study, the dependence of Cu electrochemical mechanical planarization (ECMP) rate on electric potential and mechanical force in electrolyte is investigated using potentiodynamic analysis, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). In chemical etching, CMP, electropolishing, and ECMP processes, the Cu removal rate is mainly affected by the interplay between electric potential and mechanical force. An equivalent circuit is built by fitting the EIS results to explain the behavior of Cu dissolution and Cu passive film. The Cu dissolution rate increased with decreasing charge-transfer time-delay. The resistance of the Cu passive film (R_{\text{p}}) is proportional to the intensity ratio of \text{Cu_{2}O}/[\text{Cu(OH)_{2}}+ \text{CuO}].

• 2012-03-25

著者

• Chang Shih-chieh

  Institute Of Materials Science And Engineering National Cliiao Tang University

• WANG Ying-Lang

  Institute of Electronics, National Chiao-Tung University

• LIU Chuan-Pu

  Department of Materials Science & Engineering National Cheng Kung University

• Cheng Yi-Lung

  Department of Electrical Engineering, National Chi-Nan University, Nan-tou, Taiwan 54561, Republic of China

• Kung Te-Ming

  Department of Material Science and Engineering, National Chen-Kung University, Tainan 701, Taiwan, R.O.C.

• Chen Sheng-Wen

  Department of Material Science and Engineering, National Chen-Kung University, Tainan 701, Taiwan, R.O.C.

• Liu Chuan-Pu

  Department of Material Science and Engineering, National Chen-Kung University, Tainan 701, Taiwan, R.O.C.

• Cheng Yi-Lung

  Department of Electrical Engineering, National Chi Nan University, Nantou 545, Taiwan, R.O.C.

• Chang Shih-Chieh

  Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.

関連論文

• Pattern Effects on Planarization Efficiency of Cu Electropolishing
• Investigation of Carrying Agents on Microstructure of Electroplated Cu Films
• Investigation of Superfihling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization
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• Fabrication of InGaN/GaN Multiple Quantum Wells Nanopillars by Focused Ion Beam Milling
• Effect of Electron Flow Direction and Via Number on Electromigration Mechanism for Copper Dual Damascene Interconnects
• Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars
• Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
• Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
• Fabrication of Nanopillars Comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling

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