Effect of Electron Flow Direction and Via Number on Electromigration Mechanism for Copper Dual Damascene Interconnects
スポンサーリンク
概要
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In this study, the effects of the via number and the current direction on electromigration characteristics in the dual-damascene Cu lines have been investigated. The results reveal an interesting difference in electromigration behavior of electron up- and down-flow directions on the multi-via structures. Increasing the via number results in a higher electromigration failure time and then reaches saturation for electron up-flow case. As for electron down-flow direction, the failure time is independent of the via number. Moreover, the failure time of Cu lines with via structure is lower than that without via structure. A higher current density at the triple junction site in the inner via is the possible mechanism, resulting in a shorter failure time and via-number independent. These observed effects are specific to Cu dual-damascene structures and can provide great technological implications in electromigration improvement.
- 2010-12-25
著者
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Chung Wei-Yuan
Department of Electrical Engineering, National Chi-Nan University, Nan-tou, Taiwan 54561, Republic of China
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Wang Ying-Lang
Department of Electrical Engineering, National Chi-Nan University, Nan-tou, Taiwan 54561, Republic of China
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Cheng Yi-Lung
Department of Electrical Engineering, National Chi-Nan University, Nan-tou, Taiwan 54561, Republic of China
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Shiau Ming-Kai
Department of Electrical Engineering, National Chi-Nan University, Nan-tou, Taiwan 54561, Republic of China
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Cheng Yi-Lung
Department of Electrical Engineering, National Chi Nan University, Nantou 545, Taiwan, R.O.C.
関連論文
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