Investigation of Copper Scratches and Void Defects after Chemical Mechanical Polishing
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概要
- 論文の詳細を見る
In semiconductor metallization processes, copper metal is widely used for interconnection lines due to its low resistivity. However, various defects, such as scratches and voids, are usually formed after chemical mechanical polishing (CMP), which influences manufacturing yield because the copper metal is soft and easily corroded. In this study, our results indicate that defect formation is related to the properties of electroplated copper films. By increasing the plating current densities, the number of void defects increases while the number of scratch defects decreases after CMP. It is suggested that the increase in void defects with plating current densities is due to the increase in film tensile stress, while the decrease in scratch defects results from an increase in film hardness.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Chang Shih-chieh
Department Of Industrial Engineering And Systems Management Feng Chia University
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Lee Wen-hsi
Department Of Electrical Engineering National Cheng Kung University
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Hung Chi-Cheng
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Wang Ying-Lang
Department of Electrical Engineering, National Chiayi University, Chiayi 60004, Taiwan
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Hwang Gwo-Jen
College of Science and Engineering, National University of Tainan, Tainan 700, Taiwan
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Hwang Gwo-Jen
Colledge of Science and Engineering, National University of Tainan, Tainan 701, Taiwan, R.O.C.
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Wang Ying-Lang
Department of Electrical Engineering, National Chi-Nan University, Nan-tou, Taiwan 54561, Republic of China
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Lee Wen-Hsi
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Chang Shih-Chieh
Department of Electrical Engineering, National Chiayi University, Chiayi 600, Taiwan, R.O.C.
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Chang Shih-Chieh
Department of Electrical Engineering, National Chiayi University, Chiayi 60004, Taiwan
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