Relationship between Microstructure and Electrical Properties of ZnO-based Multilayer Varistor
スポンサーリンク
概要
- 論文の詳細を見る
In this study, two types of ZnO-based multilayer varistor (MLV) with two different dielectric layers (12 and 24 μm), sintered from 900 to 1000 °C for 2 h were prepared to investigate the effects of microstructure such as the grain size and number of grain boundaries between two adjourn electrodes on electrical properties. The results show that the grain size linearly increases with sintering temperature, which results in an increase in the capacitance of ZnO-based MLVs. In contrast, the number of grain boundaries between two adjourn electrodes linearly decreases with sintering temperature associated with a decrease in breakdown voltage, leakage current and nonlinear coefficient of ZnO-based MLVs. The energy absorption capabilities determined from the peak current (PC) measurements of ZnO-based MLVs with sintering temperature are reported. The optimum peak currents of ZnO-based MLVs can be obtained by sintering at 950 °C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
-
Lee Wen-hsi
Department Of Electrical Engineering National Cheng Kung University
-
LEE Ying-Chieh
R&D Technology Center, Yageo Corporation, Nantze Branch
-
LIN Shih-Pin
R&D Technology Center, Yageo Corporation, Nantze Branch
-
Yang Tony
R&D Technology Center, Yageo Corporation Nantze Branch, Taiwan
-
Chen Wei-Ting
Department of Electrical Engineering, National Cheng Kung University, Taiwan
-
Lee Wen-Hsi
Department of Electrical Engineering, National Cheng Kung University, Taiwan
-
Lin Shih-Pin
R&D Technology Center, Yageo Corporation Nantze Branch, Taiwan
-
Chen Wei-Ting
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
-
Lee Ying-Chieh
R&D Technology Center, Yageo Corporation Nantze Branch, Taiwan
-
Yang Tony
R&D Technology Center, Yageo Corporation Nantze Branch, Taiwan
関連論文
- Effect of Inner Electrode on Electrical Properties of (Zn,Mg)TiO_3-Based Multilayer Ceramic Capacitor
- Study on low temperature sintering and microwave dielectric properties of Ba_2Ti_9O_-based ceramics(Aqueous Solution Science for Ceramic Processing II)
- Phase development and dielectric properties of BaAl_2Si_2O_8-based low temperature co-fire ceramic material
- Effect of Doped Insulating Nanoparticles on the Electro-Optical Characteristics of Nematic Liquid Crystals
- Effects of Dopant on the Dielectric Properties of CaZrO3 Ceramic Sintered in a Reducing Atmosphere
- Study on Preparation of High-k Organic-Inorganic Thin Film for Organic-Inorganic Thin Film Transistor Gate Dielectric Application
- Effect of Inner Electrode on Electrical Properties of (Zn,Mg)TiO3-Based Multilayer Ceramic Capacitor
- Investigation of Dielectric Properties of BaZr(BO3)2 Ceramics
- Effects of Glass Addition on Microwave Dielectric Properties of Zn0.95Mg0.05TiO3 + 0.25TiO2 Ceramics
- Microwave Dielectric Properties of Zn0.95Mg0.05TiO3 + 0.25TiO2 Ceramics with 3ZnO–B2O3 Addition
- Measurement Techniques of Sheet Resistance on Copper Defects after Chemical Mechanical Polishing
- Investigation of Copper Scratches and Void Defects after Chemical Mechanical Polishing
- Magnetic Effect during Copper Electroplating Using Electrochemical Impedance Spectroscopy
- Relationship between Microstructure and Electrical Properties of ZnO-based Multilayer Varistor
- Characterization of ZnO-Based Multilayer Varistor Sintered by Hot-Press Sintering
- Characteristic of Organic Thin Film Transistor with a High-$k$ Insulator of Nano-TiO2 and Polyimide Blend