Fabrication of Nanopillars Comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling

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概要

• 論文の詳細を見る

• The focused ion beam direct-written InGaN/GaN multiple-quantum-well nanopillars display strong cathodoluminescence emission blue-shifted by 35 meV compared with that of the as-grown wafer. With the removal of ion-irradiation-damage layers, the emission intensity even increased by a factor of 15. The ion beam induced nanopillar swelling was deliberately enhanced by tuning the beam condition, and the swollen volume can also be easily removed by wet-etching using KOH solution. The swelling behavior of an InGaN/GaN nanopillar under focused ion beam milling is found to play an important rule in reducing pillar size.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-06-25

著者

• WU Shang-En

  Department of Materials Science & Engineering National Cheng Kung University

• HSUEH Tao-Hung

  Center for Micro/Nano Science and Technology National Cheng Kung University

• LIU Chuan-Pu

  Department of Materials Science & Engineering National Cheng Kung University

• Huang Yu-Wen

  Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Liu Chuan-Pu

  Department of Material Science and Engineering, National Chen-Kung University, Tainan 701, Taiwan, R.O.C.

関連論文

• Fabrication of InGaN/GaN Multiple Quantum Wells Nanopillars by Focused Ion Beam Milling
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• Fabrication of Nanopillars Comprised of InGaN/GaN Multiple Quantum Wells by Focused Ion Beam Milling

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