Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
スポンサーリンク
概要
- 論文の詳細を見る
In this study, we investigated the galvanic effect between the Cu metals and ruthenium nitride (RuNx) films that were deposited at various nitrogen (N2) gas flow rates in chemical mechanical polishing slurries. It was found that the galvanic corrosion of the RuNx films was inhibited with increasing N2 gas flow ratio, whereas the galvanic corrosion of the Cu seed layers was enhanced. Electrochemical impedance spectroscopy showed that the galvanic corrosion resistance of RuNx increased and that of the ruthenium oxide layer decreased as N2 flow ratio increased. This was because the increase in the N content in the RuNx films inhibited the corrosion and oxidation of the Ru metals.
- 2011-12-25
著者
-
Chang Shih-chieh
Institute Of Materials Science And Engineering National Cliiao Tang University
-
WANG Ying-Lang
Institute of Electronics, National Chiao-Tung University
-
Lee Wen-his
Department Of Electrical Engineering National Cheng Kung University
-
Wang Ying-Lang
Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.
-
Wu Chia-Yang
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
-
Lee Wen-Hsi
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
-
Chang Shih-Chieh
Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.
関連論文
- Pattern Effects on Planarization Efficiency of Cu Electropolishing
- Investigation of Carrying Agents on Microstructure of Electroplated Cu Films
- Investigation of Superfihling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization
- Integration of Modified Plasma-Enhanced Chemical Vapor Deposited Tetraethoxysilane Intermetal Dielectric and Chemical-Mechanical Polishing Processes for 0.35 μm IC Device Reliability Improvement
- Effect of Inner Electrode on Reliability of (Zn,Mg)TiO3-Based Multilayer Ceramic Capacitor
- Effect of Inner Electrode on Electrical Properties of (Zn,Mg)TiO3-Based Multilayer Ceramic Capacitor
- Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
- Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
- Effects of Glass Addition on Microwave Dielectric Properties of Zn0.95Mg0.05TiO3 + 0.25TiO2 Ceramics
- Mn-Doped BaO–(Nd0.7,Sm0.3)2O3–4TiO2 Ceramic Sintered in a Reducing Atmosphere
- Characterization of ZnO-Based Multilayer Varistor Sintered by Hot-Press Sintering