High-Efficiency Organic Electroluminescent Device with Multiple Emitting Units
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we report on the fabrication of multilayer organic light emitting diodes (OLEDs) with high electroluminescent (EL) yield achieved by integrating two units of green-emissive devices in series. The architecture of the device used in the experiment is Indium–Tin–Oxid (ITO)/CuPc/NPB/C545T:Alq3/Alq3/Mg:Alq3/WO3/NPB/C545T:Alq3/Alq3/LiF/Al. We found the efficiency of the two-unit devices can be controllable by the thickness of WO3. The two-unit devices with 1-nm-thick WO3 produces the luminance efficiency of 49.2 cd/A at 20 mA/cm2, which is around four times that of the controlled single-unit device (ITO/CuPc/NPB/C545T:Alq3/Alq3/LiF/Al). Compared with reported research data, the "amplification effect" discovered in our device is a rather unexpected result. The external quantum efficiency of 12.6%, with near-saturated Commission Internationale d'Eclairage coordinates ($\mathrm{CIE}x=0.27$, $\mathrm{CIE}y=0.68$), is one of the best ever reported for a fluorescent dye-doped OLED. We also demonstrate that the electron injection layer of Mg:Alq3 is a necessary component for the enhancement of EL efficiency. These results may prove to be an effective method to enhance the efficiency as well as the lifetime of current OLEDs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
-
Chen Jenn-fang
Department Of Electrophysics National Chiao Tung University
-
CHEN Chin
Display Institute, National Chiao Tung University
-
Hwang Shiao-Wen
Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
-
Chang Chan-Ching
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
-
Hwang Shiao-Wen
Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan 30050, R.O.C.
-
Chen Chin
Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan
-
Hwang Shiao-Wen
Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan
関連論文
- Evolution of Carrier Distribution and Defects in InGaAsN/GaAs Quantum Wells with Composition Fluctuation
- Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
- Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
- Voltage and Frequency Dependence of Differential Capacitance in Relaxed In_Ga_As/GaAs Schottky Diodes
- Admittance Spectroscopy and Thermal Stimulation Current for Band-Offset Characteristics in AlAs/GaAs n^+-p Structures
- Capacitance Dispersion in n-LT-i-p GaAs Structures with the Low-Temperature Layers Grown at Different Temperatures
- Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
- Observation of a Dominant EL2-like Mid-Gap Trap in In_Ga_As/GaAs Suuperlattice Grown at Low Temperature by Molecular Beam Epitaxy
- Deep Levels in SnTe-Doped GaSb Grown on GaAs by Molecular Beam Epitaxy
- Ultrathin Electron Injection Layer on Indium-Tin Oxide Bottom Cathode for Highly Efficient Inverted Organic Light-Emitting Diodes
- Electrical Properties of Undoped and SnTe-Doped Ga_xIn_Sb Molecular-Beam-Epitaxially Growm on GaAs
- Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States : The Influence of Illuminance (Special Issue : Solid State Devices and Materials (1))
- Electron Emission Properties of Nitrogen-Induced Localized Defects in InAsN/GaAs Quantum Dots
- Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor
- Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
- Effect of Nitrogen Incorporation into InAs layer in InAs/InGaAs Self-Assembled Quantum Dots
- Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing
- Thin-Film Encapsulation of Thin-Cathode Organic Light-Emitting Devices
- Ultrathin Electron Injection Layer on Indium–Tin Oxide Bottom Cathode for Highly Efficient Inverted Organic Light-Emitting Diodes
- Highly Efficient Yellowish-White Phosphorescent Organic Light-Emitting Devices
- High-Efficiency Organic Electroluminescent Device with Multiple Emitting Units
- Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy