Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor

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概要

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• A novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient ($\partial V_{\text{th}}/\partial T$) of $-0.807$ mV/K and a high-temperature linearity ($\partial\mathit{GVS}/\partial T$) of $-0.053$ mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3Ga0.7As0.99N0.01(Sb)/GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance ($g_{\text{m,max}}$) of 94 (109) mS/mm at 450 (300) K.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Chen Jenn-fang

  Department Of Electrophysics National Chiao Tung University

• Hsiao Ru-shang

  Department Of Electrophysics National Chiao Tung University

• Hu Po-jung

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University

• Su Ke-hua

  Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn

• Hsu Wei-chou

  Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn

• Lee Ching-sung

  Department Of Electrical Engineering National Cheng Kung University

• Hu Po-Jung

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.

• Chi Tung-Wei

  Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.

• Hsiao Ru-Shang

  Department of Eletrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Su Ke-Hua

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.

• Chen Jenn-Fang

  Department of Eletrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hsu Wei-Chou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.

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