Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-09-15

著者

• Wen Tzu-chi

  Department Of Electrophysics National Chiao Tung University

• LEE Wei-I

  Department of Electrophysics, and Microelectronics and Information Systems Research Center, National

• Lee Wei-i

  Department Of Electrophysics And Microelectronics And Information Systems Research Center National C

• Wen Tzu-chi

  Department Of Electrophysics And Microelectronics And Information Systems Research Center National C

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• Activation of p-Type GaN in a Pure Oxygen Ambient : Semiconductors
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• Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
• Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
• Ga_In_P Barrier Layer for Wet Oxidation of AIAs
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
• A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
• Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
• Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy

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