A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy

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概要

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• A-plane GaN was grown on r-plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([\bar{1}100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography.

• 2013-08-25

著者

• Lee Wei-i

  Department Of Electrophysics And Microelectronics And Information Systems Research Center National C

• Yeh Yen-Hsien

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

• Wu Yin-Hao

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

• Chen Chan-Lin

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

• Chu Chung-Ming

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

• Lee Chuo-Han

  Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

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• Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well : Semiconductors
• Ga_In_P Barrier Layer for Wet Oxidation of AIAs
• Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
• A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
• Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Thickness Dependence of Current Conduction and Carrier Distribution of GaAsN Grown on GaAs
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
• Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode
• A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy

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