Vertical-Channel Organic Thin-Film Transistors with Meshed Electrode and Low Leakage Current

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概要

• 論文の詳細を見る

• In this study, we have successfully fabricated vertical-channel organic thin-film transistors with a channel length smaller than 100 nm. It is found that Fowler–Nordheim tunneling is the dominant mechanism determining the ultra short-channel device behavior. To improve the gate control capability, a meshed source electrode pad had been used. This significantly lowers the gate and drain driving voltages (${<}10$ V), improves the saturation characteristics and reduces the leakage current. The improvement may be due to the fringing field around the source electrode, which suppresses the tunneling effect.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-06-15

著者

• Yen Kuo-Hsi

  Institute of Electro-Optical Engineering (IEO), National Chiao Tung University, Taiwan

• Zan Hsiao-Wen

  Department of Photonics and Display Institute (DI), National Chiao Tung University, Taiwan

• Zan Hsiao-Wen

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

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