Effects of Ar/N_2 Flow Ratio on Sputtered-AlN Film and Its Application to Low-Voltage Organic Thin-Film Transistors
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-10-25
著者
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Zan Hsiao-wen
Department Of Photonics And Institute Of Electro-optical Engineering And Display Institute National
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YEN Kuo-Hsi
Department of Photonics and Institute of Electro-Optical Engineering and Display Institute, National
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LIU Pu-Kuan
Department of Photonics and Institute of Electro-Optical Engineering and Display Institute, National
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KU Kuo-Hsin
Department of Materials Science and Engineering, National Tsing Hua University
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CHEN Chien-Hsun
Department of Materials Science and Engineering, National Tsing Hua University
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HWANG Jennchang
Department of Materials Science and Engineering, National Tsing Hua University
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Yen Kuo-hsi
Department Of Photonics And Institute Of Electro-optical Engineering And Display Institute National
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Liu Pu-kuan
Department Of Photonics And Institute Of Electro-optical Engineering And Display Institute National
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Ku Kuo-hsin
Department Of Materials Science And Engineering National Tsing Hua University
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Chen Chien-hsun
Department Of Civil Engineering Clemson University
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Chen Chien-hsun
Department Of Materials Science And Engineering National Tsing Hua University
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Hwang Jennchang
Department Of Materials Science And Engineering National Tsing Hua University
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Yen Kuo-Hsi
Department of Photonics and Institute of Electro-Optical Engineering and Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China
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Hwang Jennchang
Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
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Zan Hsiao-Wen
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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- Effects of Ar/N2 Flow Ratio on Sputtered-AlN Film and Its Application to Low-Voltage Organic Thin-Film Transistors