High-Efficiency Crystallization of Amorphous Silicon Films on Glass Substrate by New Metal-Mediated Mechanism

スポンサーリンク

概要

• 論文の詳細を見る

• A new crystallization technique for crystallizing amorphous silicon (a-Si) film with a low thermal budget is proposed. A highly crystalline polycrystalline silicon (poly-Si) film can be rapidly obtained on a low-cost glass substrate by this technique. A material with a large IR absorption coefficient provides energy for crystallizing a-Si film into poly-Si film. By this new technique, we can make highly crystalline poly-Si film efficiently. Atomic force microscopy (AFM), Raman scattering, X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) with energy dispersive spectrometer (EDS) measurements demonstrated that a-Si film can be fully crystallized by annealing with five 5 s pulses at 870°C. The roughness of film processed by this new technique is only 0.59 nm which is superior to the 7.8 nm obtained by the conventional excimer laser crystallization (ELC) technique. The average grain size and grain growth rate obtained in this technique are 0.82 μm and 120 μm/min, respectively.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Lin Chiung-wei

  Institute Of Electro-optical Engineering Tatung University

• Lin Chiung-Wei

  Institute of Electro-Optical Engineering, Tatung University, Taipei, Taiwan, R.O.C.

• Lee Yeong-Shyang

  AU Optronics Corporation, Hsin-Chu, Taiwan, R.O.C.

• Lee Seng-Chi

  Institute of Electro-Optical Engineering, Tatung University, Taipei, Taiwan, R.O.C.

関連論文

• A Novel Thin-Film Transistor with Vertical Offset Structure
• Highly Uniform Polycrystalline Silicon Thin Films Fabricated by Metal Plate Energy-Assisted Agent Method
• Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide
• Fast Grain Growth of Metal-Induced Lateral Crystallization of Amorphous Silicon Using Rapid Energy Transfer Annealing
• Electrical Properties of Metal–Silicon Nitride–Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
• Rapid and Efficient Recrystallization and Activation of Implanted Phosphorus Doping in Laser-Annealed Polysilicon by Rapid Energy Transfer Annealing
• High-Efficiency Crystallization of Amorphous Silicon Films on Glass Substrate by New Metal-Mediated Mechanism

スポンサーリンク