Fast Grain Growth of Metal-Induced Lateral Crystallization of Amorphous Silicon Using Rapid Energy Transfer Annealing
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概要
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In this work, we examine the acceleration of the grain growth of the nickel (Ni) metal-induced lateral crystallization (MILC) of amorphous silicon by rapid energy transfer annealing (RETA). An extremely high grain growth rate, exceeding 3.4 μm/min, was obtained using five pulses of RETA annealing, since nickel silicide mediated faster grain growth than that obtained by random nucleation, and the metastable internal energy of the a-Si film was relaxed at a high temperature. Transmission electron microscopy (TEM) images and energy dispersive X-ray (EDX) spectra reveal that the laterally crystallized polysilicon regions incorporate large grains with little contamination by residual Ni atoms.
- Japan Society of Applied Physicsの論文
- 2003-12-01
著者
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Jiang Yeu-long
Department Of Electrical Engineering National Chung Hsing University
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CHEN Chi-Lin
Electronics Research and Service Organization Industrial Technology Research Institute
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Lin Chiung-wei
Institute Of Electro-optical Engineering Tatung University
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Huang Shun-Fa
Electronics Research and Service Organization, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, Republic of China
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Huang Shun-Fa
Electronics Research and Service Organization, Industrial Technology Research Institute, Chutung, Hsin-Chu 310, Taiwan, Republic of China
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Jiang Yeu-Long
Department of Electrical Engineering, National Chung Hsing University, Taichung 402, Taiwan, Republic of China
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