Rapid Energy Transfer Annealing for the Crystallization of Amorphous Silicon

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概要

• 論文の詳細を見る

• A rapid energy transfer annealing using an energy plate efficiently transferring photon energy to heat energy and by adjusting gas heat conduction can provide high energy transfer efficiency and controllability to rapidly crystallize amorphous silicon to polysilicon. The X-ray diffraction (XRD), Raman scattering, transmission electron microscopy (TEM), atomic force microscopy (AFM), and I-V measurements demonstrate that both thin and thick a-Si films can be fully crystallized within 20 three-second 850°C pulses annealing, that the films before and after annealing have the same roughness of about 1.3 nm and the conductivities of about $1.0 \times 10^{-10}$ and $2.3 \times 10^{-7}$ ($\Omega$$\cdot$cm)-1, respectively.

• Japan Society of Applied Physicsの論文
• 2003-08-15

著者

• Jiang Yeu-long

  Department Of Electrical Engineering National Chung Hsing University

関連論文

• Very Low Temperature Deposition of Polycrystalline Si Films Fabricated by Hydrogen Dilution with Electron Cyclotron Resonance Chemical Vapor Deposition
• CHARACTERIZATION OF A-SiGe:H FILMS DEPOSITED BY PULSE RF POWER
• Fast Grain Growth of Metal-Induced Lateral Crystallization of Amorphous Silicon Using Rapid Energy Transfer Annealing
• Rapid and Efficient Recrystallization and Activation of Implanted Phosphorus Doping in Laser-Annealed Polysilicon by Rapid Energy Transfer Annealing
• Rapid Energy Transfer Annealing for the Crystallization of Amorphous Silicon

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