Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-08-20
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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Cho Y‐k
Univ. Tsukuba Ibaraki
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Cho Yang-koo
Institute Of Materials Science University Of Tsukuba:(present Address)korea Standards Institute
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Cho Yang-koo
Institute Of Materials Science University Of Tsukuba:(present Address)korea Research Institute)
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WEI Long
Institute of Materials Science, University of Tsukuba
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DOSHO Chisei
Institute of Materials Science, University of Tsukuba
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Wei L
Institute Of Materials Science University Of Tsukuba
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Hinode Kenji
Central Research Laboratory Hitachi Ltd.
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Hinode Kenji
Central Research Laboratory Hitachi Lid.
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Wei Long
Institute Of Materials Science University Of Tsukuba
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Dosho Chisei
Institute Of Materials Science University Of Tsukuba
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Tanigawa S
Institute Of Applied Physics University Of Tsukuba
関連論文
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- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
- The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
- Amorphization Processes and Structural Relaxation in Ion Implanted Si
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
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- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
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- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Vacancy-Type Defects in Be-Implanted InP
- Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
- Dielectric Breakdown and Light Emission in Copper Damascene Structure under Bias-Temperature Stress
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- The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
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- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- Positron Study of Electron Momentum Density and Fermi Surface in Titanium and Zirconium
- Resistivity Increase In Ultrafine-Line Copper Conductor for ULSIs : Semiconductors
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