Time-Dependent Dielectric Breakdown of Interlevel Dielectrics for Copper Metallization

スポンサーリンク

概要

• 論文の詳細を見る
• 1996-03-15

著者

• Hinode K

  Hitachi Ltd. Tokyo Jpn

• Hinode Kenji

  Central Research Laboratory Hitachi Lid.

• Kobayashi Nobuyoshi

  Semiconductor & Integrated Circuits Div. Hitachi Ltd.

• HOMMA Yoshio

  Central Research Laboratory, Hitachi, Ltd.

• Homma Y

  Hitachi Ltd. Tokyo Jpn

• Homma Yoshio

  Central Research Laboratory Hitachi Ltd.

• MIYAZAKI Hiroshi

  Central Research Laboratory, Hitachi, Ltd.

• Miyazaki H

  Osaka Univ. Osaka Jpn

• Miyazaki Hiroshi

  Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P

関連論文

• Highly Selective Etching of Poly-Si by Time Modulation Bias
• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
• Dielectric Breakdown and Light Emission in Copper Damascene Structure under Bias-Temperature Stress
• Slurry Chemical Corrosion and Galvanic Corrosion during Copper Chemical Mechanical Polishing
• Heat and Moisture Resistance of Low-Capacitance Multilevel Interconnections Using Low-Permittivity Organic Spin-On Glass
• Increase in Electrical Resistivity of Copper and Aluminum Fine Lines
• Time-Dependent Dielectric Breakdown of Interlevel Dielectrics for Copper Metallization
• Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns(Microelectronic Test Structures)
• Nonlinear Dynamics in Directly Modulated Self-Pulsating Laser Diodes with a Highly Doped Saturable Absorption Layer(Optics and Quantum Electronics)
• SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
• Surface-Reaction-Controlled Tungsten CVD Technology for 0.1-µm Low-Resistive, Encroachment-Free CMOS-FET Applications
• Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
• Directional Plasma CVD Technology for Sub-quarter-micron Feature Size Multilevel Interconnections
• Directional Plasma CVD Technology for Sub-Quarter Micrometer Feature Size Multilevel Interconnection
• Low Permittivity Organic Dielectrics for Multilevel Interconnection in High Speed ULSIs
• Reliability of Low-Parasitic-Capacitance Multilevel Interconnection Using Surface-Densified Low-ε Organic Spin-on Glass
• Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features
• Resistivity Increase In Ultrafine-Line Copper Conductor for ULSIs : Semiconductors
• Fast Electromigration-lifetime Prediction of Al-based Layered Metallization using the Similarity of Resistance Increase Curve
• Precise Control of SiO_2 Etching Characteristics Using Mono-Layer Adsorption of HF/H_2O Vapor
• B24-071 Low Dielectric-constant (k
• Ultraviolet-Curing Mechanism of Porous-SiOC
• Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
• Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations
• Fast Electromigration-lifetime Prediction of Al-based Layered Metallization using the Similarity of Resistance Increase Curve

もっと見る 閉じる

スポンサーリンク