Highly Selective Etching of Poly-Si by Time Modulation Bias

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-09-15

著者

• Kure Tokuo

  Central Research Laboratory, Hitachi, Ltd.

• Kure T

  Hitachi Ltd. Tokyo Jpn

• Kure Tokuo

  Central Research Laboratory Hitachi Ltd

• GOTO Yasushi

  Central Research Laboratory, Hitachi, Ltd.

• Kure Tokuo

  Hitachi Ulsi Engineering Corp.

• ONO Tetsuo

  Kasado Works, Hitachi, Ltd

• MIZUTANI Tatsumi

  Kasado Works, Hitachi, Ltd.

• Miyazaki Hiroshi

  Kasado Works, Hitachi, Ltd.

• Ono T

  Osaka Univ. Osaka Jpn

• Goto Y

  Central Research Laboratory Hitachi Ltd.

• Goto Yasushi

  Central Research Laboratory Hitachi Ltd.

• Miyazaki H

  Osaka Univ. Osaka Jpn

• Miyazaki Hiroshi

  Kasado Works Hitachi Ltd.

関連論文

• Analysis of Polymer Formation during SiO_2 Microwave Plasma Etching
• Estimation of Ion Incident Angle from Si Etching Profiles
• A 6.93-μm^2 Full CMOS SRAM Cell Technology for 1.8-V High-Performance Cache Memory
• Hydrogen-Gas Detection System and its Functions to Make Each Sensor Wireless
• Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
• Highly Selective Etching of Poly-Si by Time Modulation Bias
• Low-Temperature Etching for Deep-Submicron Trilayer Resist
• Tungsten Gate Technology for Quarter-Micron Application
• Tungsten Gate Technology for Quarter-Micron Application
• Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
• Fabrication and Operation of Si-Coupled Superconducting FET with 0.1μm Gate : Microfabrication and Physics
• 単一電子メモリの現状と将来
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• Positive Charge Generation at a SiO_2/Si Interface due to Bombardment with Metastable Atoms
• Thermal and Ion-Induced Reactions on a Chlorine-Adsorbed GaAs (100) Surface Studied by Metastable-Atom De-excitation Electron Spectroscopy
• Evaluation of Charge Passed through Gate-Oxide Films Using a Charging Damage Measurement Electrode
• An IR Study on the Stability of Y(DPM)_3, Ba(DPM)_2 and Cu(CPM)_2 for UV Irradiation
• Influence of Ozone Concentration on the Preparation of Stoichiometric Superconducting Y-Ba-Cu-O Films by a Metalorganic Chemical Vapor Deposition Technique
• Time-Dependent Dielectric Breakdown of Interlevel Dielectrics for Copper Metallization
• Nonlinear Dynamics in Directly Modulated Self-Pulsating Laser Diodes with a Highly Doped Saturable Absorption Layer(Optics and Quantum Electronics)
• Mechanism for CF Polymer Film Deposition through Deep SiO_2 Holes in Electron Cyclotron Resonance Plasma
• Mechanism of CF Polymer Film Deposition through High-Aspect-Ratio SiO_2 Holes
• Bimorph Type Actuators Using Lead Zinc Niobate-Based Ceramics : Piezoelectrics
• Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
• Tungsten Gate Technology for Quarter-Micron Application

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