Tungsten Gate Technology for Quarter-Micron Application

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Kure Tokuo

  Central Research Laboratory, Hitachi, Ltd.

• Kure T

  Hitachi Ltd. Tokyo Jpn

• Kure Tokuo

  Central Research Laboratory Hitachi Ltd.

• Kure Tokuo

  Central Research Laboratory Hitachi Ltd

• GOTO Yasushi

  Central Research Laboratory, Hitachi, Ltd.

• NODA Hiromasa

  Semiconductor & Integrated Circuits Div., Hitachi, Ltd.

• SAKIYAMA Hideyuki

  Hitachi VLSI Engineering Corp.

• Goto Yasushi

  Central Research Laboratory Hitachi Ltd.

• Noda Hiromasa

  Semiconductor & Integrated Circuits Div. Hitachi Ltd.

関連論文

• Analysis of Polymer Formation during SiO_2 Microwave Plasma Etching
• Estimation of Ion Incident Angle from Si Etching Profiles
• A 6.93-μm^2 Full CMOS SRAM Cell Technology for 1.8-V High-Performance Cache Memory
• Hydrogen-Gas Detection System and its Functions to Make Each Sensor Wireless
• Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
• Highly Selective Etching of Poly-Si by Time Modulation Bias
• Low-Temperature Etching for Deep-Submicron Trilayer Resist
• Tungsten Gate Technology for Quarter-Micron Application
• Tungsten Gate Technology for Quarter-Micron Application
• Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
• Fabrication and Operation of Si-Coupled Superconducting FET with 0.1μm Gate : Microfabrication and Physics
• 単一電子メモリの現状と将来
• A 128Mb Single-Electron Memory
• Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
• Tungsten Gate Technology for Quarter-Micron Application

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