Analysis of Polymer Formation during SiO_2 Microwave Plasma Etching
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-04-30
著者
-
Gotoh Yasushi
Central Research Laboratory Hitachi Ltd.
-
Kure Tokuo
Central Research Laboratory, Hitachi, Ltd.
-
Kure Tokuo
Central Research Laboratory Hitachi Ltd
関連論文
- Analysis of Polymer Formation during SiO_2 Microwave Plasma Etching
- Estimation of Ion Incident Angle from Si Etching Profiles
- Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
- Highly Selective Etching of Poly-Si by Time Modulation Bias
- Low-Temperature Etching for Deep-Submicron Trilayer Resist
- Tungsten Gate Technology for Quarter-Micron Application
- Tungsten Gate Technology for Quarter-Micron Application
- Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
- Fabrication and Operation of Si-Coupled Superconducting FET with 0.1μm Gate : Microfabrication and Physics
- 単一電子メモリの現状と将来
- Nanofabrication with a Novel EB System with a Large and Stable Beam Current
- Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
- Tungsten Gate Technology for Quarter-Micron Application