Evaluation of Charge Passed through Gate-Oxide Films Using a Charging Damage Measurement Electrode

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-02-15

著者

• Tamura H

  R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.

• Watanabe S

  Univ. Tokyo Tokyo Jpn

• YOSHIOKA Ken

  Kanagawa Indnsteial Technolgy Research Institute

• MIZUTANI Tatsumi

  Kasado Works, Hitachi, Ltd.

• Watanabe S

  R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.

• Watanabe S

  Division Of Materials Science Graduate School Of Engineering Hokkaido University

• YOSHIOKA Ken

  Kasado Design Department, Semiconductor Equipment Product Division, Semiconductor Manufacturing Equi

• WATANABE Seiichi

  Kasado R&D Center, Power & Industrial Systems, Hitachi Ltd.

• SUMIYA Masahiro

  Kasado R&D Center, Power & Industrial Systems, Hitachi Ltd.

• TAMURA Hitoshi

  Mechanical Engineering Research Laboratory, Hitachi Ltd.

• TOKUNAGA Takafumi

  Device Development Center, Hitachi Ltd.

• Watanabe Seiichi

  R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.

• Yoshioka K

  Kasado Design Department Semiconductor Equipment Product Division Semiconductor Manufacturing Equipm

• Tamura H

  Department Of Computer Science And Electronics Kyushu Institute Of Technology

• Tamura Hitomi

  Network Design Research Center Kyushu Institute Of Technology

• Tamura Hitoshi

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Tamura Hideki

  Faculty Of Eng. Yamagata Univ.

• Tokunaga Takafumi

  Device Development Center Hitachi Ltd.

• Sumiya M

  R&d Center Kasado Administrative Division Power & Industrial Systems Hitachi Ltd.

• WATANABE Shigeya

  Department of Engineering Physics, Faculty of Engineering, Kyoto University

関連論文

• Adsorption Properties of CH_3OH on Al(111) and Fe(100) Surfaces : A Periodic First-Principles Investigation
• X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical Treatment
• Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
• X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
• Analysis of the Peptides (Prp106-126, MSI-78A, and Oxaldie 1) with the Same Biological Activity by Discrete Fourier Transform: Toward a Selection Rule in Ligand-Receptor Interaction
• Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
• Highly Selective Etching of Poly-Si by Time Modulation Bias
• Boundary Structure of Mo/Si Multilayers for Soft X-Ray Mirrors
• Electron-Irradiation-Induced Amorphization in Mo/Si Nano-Multilayer Material
• Performance Analysis of Flow Loss Probability and Link Utilization in MPLS Networks for Traffic Engineering(MPLS)(Internet Technology IV)
• Performance Analysis of IP Datagram Transmission Delay in MPLS: Impact of Both Number and Bandwidth of LSPs of Layer 2(Special Issue on Internet Technology II)
• Monojets and Production of a New Heavy Particle : Particles and Fields
• Proposal of Cryogenic Plasmas in Liquid Helium II
• Possible Existence of a Transient Superfluid Plasma in Liquid Helium II
• Basic Investigation on Achieving High Resonance Quality Factor of Piezoelectric Vibrator
• Mechanism of the Reduction of Electron Shading Charge Build-up Using Pulsed Plasma
• High-Frequency Measurements of Plasma Parameters in Electron Cyclotron Resonance Plasma Etchers(Nuclear Science, Plasmas, and Electric Discharges)
• Evaluation of Charge Passed through Gate-Oxide Films Using a Charging Damage Measurement Electrode
• Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field
• Slant Slot Antenna-Type Electron Cyclotron Resonance Plasma Source
• Preparation of Multilayers by Alternate Cycles of Chemical Adsorption and Electron Beam Irradiation
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
• Dependence of Electric Properties of Al Atomic Chains on Structure of Chain-Electrode Junction
• Theoretical Analysis of Apparent Barrier Height on an Al Surface : Difference by Measurement Methods
• First-Principles Calculation of Vibrational Properties of a Nanostructure in Electric Fields
• Ab Initio Caleulation of Capacitance of Semi-Infinite Jellium Electrodes with a Nanoscale Gap
• First-Principles Study of Apparent Barrier Height : Surfaces, Interfaces, and Films
• Ab Initio Calculation of the Electric Properties of Al Atomic Chains under Finite Bias Voltages : Electronical Properties of Condensed Matter
• Direct Imaging of Thermodynamic Process In Atom Migration by Using Scanning Tunneling Microscopy
• Reduced Density of Missing-Dimer Vacancies on Tungsten-Contaminated Si (100)-(2×n) Surface by Hydrogen Termination
• Control of Surface Current on a Si(111) Surface by Using Nanofabrication
• Concentric Spread Plasma Source
• Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on am H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets
• Measurement of a Three-Dimensional Distribution of Microwave Electric Field in Electron Cyclotron Resonance Plasmas
• Initial Stage of Molecular Adsorption on Si(100) and H-terminated Si(100) Investigated by UHV-STM(STM-Si(001))
• Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100) -2 × 1 -H Surface
• Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
• Applicability of TiN Adhesion Layer Formed by Nitridation of Sputtered Ti Film to Blanket CVD-W Contact Filling
• P2-32 Load Characteristics of a Diagonally Symmetric Form Ultrasonic Motor Using a LiNbO_3 Plate(Poster session 2)
• Tunable Exchange Interaction in Quantum Dot Devices
• Quantum Chemical Calculations of Sulfur Doping Reactions in Diamond CVD
• Molecular Orbital Calculations of Sulfur Doping Reactions in Diamond CVD
• Computational Chemistry Study on Initial Stages of Nitridation of Silicon Surfaces
• Molecular Dynamics Simulations of Adhesional Forces via Hydrocarbon Films
• Nonlinear Susceptibility of Second Harmonic Generation Corresponded to the Diamond(100)Surface Structures
• Ferromagnetism in Semiconductor Dot Array
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
• Thin Vibrator Alarm Using a Cantilever Piezoelectric Actuator
• Pt/PZT/n-SrTiO_3 Ferroelectric Memory Diode
• A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology : Chamber Surface Reaction Control in the Etching of Nonvolatile Materials
• Identification of Formation of Conically Converging Shock Waves in an Alumina-Sphere-Dispersed Copper Rod
• Anisotropic Heating of a Copper and Graphite Powder Mixture during an Electrical Column Explosion
• Characterization and Modification of Amorphous Carbon Films Consisting of sp^2 and sp^3 Bonds Using Magneto-Plasma Dynamic Arc-Jet
• Metastable Defect Cluster Formation during Radiation-Induced Amorphization in NiTi
• Atomistic observation and simulation analysis of spatiotemporal fluctuations during radiation-induced amorphization
• Effect of Surface Modification by Ion Implantation on Hydrogenation Property of TiFe Alloy
• Dynamical Study of Spatio-Temporal Structural Fluctuations in the Intermetallic Compound Nickel-Titanium during Radiation-Induced Crystalline-to-Amorphous Transformation
• Improvement of Corrosion Resistance and Structural Change in 304 Stainless Steel by means of Ion-Mixing
• IrO_2/Pb(Zr,Ti)O_3/Pt Capacitor Degradation with D_2 Gas at Elevated Temperature
• Formation and Stability of Metallic Silicides during Ion-Beam-Mixing in the Systems of Mo/Si and Ti/Si
• Analysis of Two-Phase Path Management Scheme for MPLS Traffic Engineering
• P2-36 Basic Study On a Threefold Rotatory Symmetric Form Quartz Vibrator for Triaxial Gyrosensor(Poster session 2)
• Triaxial Quartz Gyrosensor Using a Threefold Rotatory Symmetric Form Vibrator
• Improved Emitter-Base Junction with In_2O_3 in Dielectric-Base Transistor
• Growth of Epitaxial CeO_2 Films on (1012) Sapphire by Halide Source Plasma Enhanced Chemical Vapor Deposition
• Spatial Distribution and Transport of an Electron Cyclotron Resonance Plasma Generated Using Dominant-Mode Microwave
• Spatial Distribution Measurement of Microwave Electric Field Using Thermal Sensitive Paper in a Microwave Etching System
• Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
• The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs
• Electrical and Crystallographic Properties of Sputtered-Pb(Zr,Ti)O_3 Films Treated by Rapid Thermal Annealing
• Fabrication of Shallow Silicon Nanoholes and Fixing Nanoparticles
• Preparation and Characterization of Gold-Titania Nanoparticles
• Energy Saving Scheme with an Extra Active Period for LAN Switches
• Extra U(1) Phenomenology from the E_8×E_8 Superstring Theory : Particles and Fields
• Mechanism for CF Polymer Film Deposition through Deep SiO_2 Holes in Electron Cyclotron Resonance Plasma
• Magnetic Field Dependence of Critical Current Density in Superconducting Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O Films (Special Issue on High-Temperature Superconducting Electronics)
• Spectroscopic Evaluation on Photosensitive Langmuir Films Using Multichannel Spectrophotometer : Techniques, Instrumentations and Measurement
• Application of Dye Laser to the Hook Method on the Population Measurement of Excited He and Ne Atoms in the Pulsed Discharge
• Boron and Phosphorus Jon Emissions from a Cu-P-Pt-B Liquid Metal Ion Source
• Mass and Energy Analyses of Gallium-Indium Liquid-Metal-Ion Sources
• Development of Phosphorus Liquid-Metal-Ion Source
• Sound Field Characteristics in Air Gaps of Noncontact Ultrasonic Motor Driven by Two Flexural Standing Wave Vibration Disks
• Noncontact Ultrasonic Motor with Two Flexural Standing Wave Vibration Disks
• Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
• A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology: Chamber Surface Reaction Control in the Etching of Nonvolatile Materials
• Optimum Design for Noncontact Ultrasonic Motor with Flexurally Vibrating Disk Using an Equivalent Circuit Considering Viscosity of Air
• Measurement of a Three-Dimensional Distribution of Microwave Electric Field in Electron Cyclotron Resonance Plasmas

もっと見る 閉じる

スポンサーリンク