A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology : Chamber Surface Reaction Control in the Etching of Nonvolatile Materials
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-12-15
著者
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YOSHIOKA Ken
Kasado Design Department, Semiconductor Equipment Product Division, Semiconductor Manufacturing Equi
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Doi A
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Kanai Saburo
Kasado Division Hitachi High-technologies Corporation
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Mise Nobuyuki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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EDAMURA Manabu
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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NISHIO Ryoji
Kasado Division, Hitachi High-Technologies Corporation
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KANEKIYO Tadamitsu
Kasado Division, Hitachi High-Technologies Corporation
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KANNO Seiichiro
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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DOI Akira
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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KAZUMI Hideyuki
Hitachi Research Laboratory, Hitachi, Ltd.
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Nishio R
Hitachi High‐technologies Corp. Yamaguchi Jpn
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Kanno S
Hitachi Ltd. Ibaraki Jpn
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Kanekiyo Tadamitsu
Kasado Division Hitachi High-technologies Corporation
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Edamura Manabu
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Kazumi Hideyuki
Hitachi Research Laboratory Hitachi Ltd.
関連論文
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- A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology : Chamber Surface Reaction Control in the Etching of Nonvolatile Materials
- Ion Transport from Laser Induced Metal Plasma to Ion Extraction Electrodes
- Wafer-Voltage Measurement in Plasma Processes by Means of a New Probe Method and an Impedance Monitor
- Radical and Ion Compositions of BCl_3/Cl_2 Plasma and Their Relation to Aluminum Etch Characteristics
- Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching
- A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology: Chamber Surface Reaction Control in the Etching of Nonvolatile Materials