Wafer-Voltage Measurement in Plasma Processes by Means of a New Probe Method and an Impedance Monitor

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-03-15

著者

• KANNO Seiichiro

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• Nishio Ryoji

  Hitachi High-technologies Corporation

• Kanno Seiichiro

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• TANAKA Junichi

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• TETSUKA Tsutomu

  Mechanical Engineering Research Laboratory, Hitachi, Ltd.

• YAMAMOTO Hideyuki

  Hitachi High-Technologies Corporation

関連論文

• A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology : Chamber Surface Reaction Control in the Etching of Nonvolatile Materials
• Wafer-Voltage Measurement in Plasma Processes by Means of a New Probe Method and an Impedance Monitor
• A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology: Chamber Surface Reaction Control in the Etching of Nonvolatile Materials
• Wafer-Voltage Measurement in Plasma Processes by Means of a New Probe Method and an Impedance Monitor

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