Wafer-Voltage Measurement in Plasma Processes by Means of a New Probe Method and an Impedance Monitor

概要

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A new probe method, which can measure wafer voltage directly from the wafer back-side without fluctuating the plasma, was developed. This method clarified the effect of the bias power, gas pressure and gas component on wafer $V_{\text{pp}}$, $V_{\text{dc}}$, and $V_{\text{dc}}/V_{\text{pp}}$. In addition, current, voltage, and phase shift were measured with an impedance monitor (IM) installed between the matching network and the bias electrode. Furthermore, wafer $V_{\text{pp}}$ was calculated from IM data according to a devised equivalent circuit model. It was found that calculated wafer $V_{\text{pp}}$ agrees with actual wafer $V_{\text{pp}}$ within 3.4% when bias power is ranged from 200 W to 500 W.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-03-15