B24-071 Low Dielectric-constant (k<2.5) Silica with Nano-scale Pores for Copper Interconnects
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概要
- 論文の詳細を見る
The mechanical properties of cabon-doped silica (MSQ) with various content of nano-scale pores are systematically investigated for Cu interconnect applications. The correlation between Young's modulus and film delamination during CMP is discussed. Based on these results, the high-modulus low-k MSQ film (k=2.3,E=10 GPa) was obtained by designing the skeleton material, and was fairly applicable to conventional CMP process for fabricating Cu interconnects.
- 一般社団法人日本機械学会の論文
- 2003-11-30
著者
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Kobayashi Nobuyoshi
Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies Inc.
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