Kobayashi Nobuyoshi | Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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概要
関連著者
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Kobayashi Nobuyoshi
Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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Kobayashi Nobuyoshi
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Yoneda Katsumi
Semiconductor Leading Edge Technologies Inc. (selete)
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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NAGAI Ryo
Semiconductor & Integrated Circuits Div., Hitachi, Ltd.
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INOUE Minoru
TAIYO NIPPON SANSO CORPORATION
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HASAKA Satoshi
TAIYO NIPPON SANSO CORPORATION
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Hisamoto D
Central Research Laboratory Hitachi Ltd.
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Hisamoto Digh
Central Research Laboratory Hitachi Ltd.
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Kobayashi N
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Umeda Kazunori
Institute Of Mechanical Systems Engineering National Institute Of Advanced Industrial Science And Te
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Umeda Kazunori
Central Research Laboratory Hitachi Ltd.
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SHINRIKI Manabu
Taiyo Nippon Sanso Corporation
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MIYAZAWA Kazuhiro
Taiyo Nippon Sanso Corporation
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SAKOTA Kaoru
Taiyo Nippon Sanso Corporation
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Ohno Takahisa
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Hamada Tomoyuki
The Fsis Center For Collaborative Research Institute Of Industrial Science University Of Tokyo
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Nagai Ryo
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Tajima Nobuo
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Nakamura Yoshitaka
Semiconductor Development Center, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.,
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Kondo Seiichi
Semiconductor Leading Edge Technologies Inc. (selete)
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Nakamura Yoshitaka
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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TAJIMA Nobuo
First Department of Internal Medicine, Nagasaki University School of Medicine
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Hinode K
Hitachi Ltd. Tokyo Jpn
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Hinode Kenji
Central Research Laboratory Hitachi Lid.
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USHIO Jiro
Advanced Research Laboratory, Hitachi Ltd.
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MARUIZUMI Takuya
Advanced Research Laboratory, Hitachi Ltd.
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HISAMOTO Digh
Central Research Laboratory, Hitachi, Ltd.
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Kobayashi Hiromasa
Semiconductor Leading Edge Technology Inc.
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technology Inc.
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Ohno T
National Research Institute For Metals
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Ohno Takahisa
National Institute For Materials Science
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Ohno Takahisa
National Research Institute For Metals
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USHIO Jiro
Central Research Laboratory, Hitachi, Ltd.
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MARUIZUMI Takuya
Central Research Laboratory, Hitachi, Ltd.
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SODA Eiichi
Semiconductor Leading Edge Technologies Inc. (Selete)
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Soda Eiichi
Semiconductor Leading Edge Technology Inc.
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Soda Eiichi
Semiconductor Leading Edge Technologies Inc.
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HOMMA Yoshio
Central Research Laboratory, Hitachi, Ltd.
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MATSUBARA Yoshihisa
Semiconductor Leading Edge Technologies, Inc.
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Wakamiya Wataru
Semiconductor Leading Edge Technology Inc.
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NASUNO Takashi
Semiconductor Leading Edge Technology, Inc.
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MINAMI Akiyuki
Semiconductor Leading Edge Technology, Inc.
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TSUDA Hiroshi
Semiconductor Leading Edge Technology, Inc.
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TSUJITA Koichiro
Semiconductor Leading Edge Technology, Inc.
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KONDO Seiichi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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TAJIMA Nobuo
First Principles Simulation Group, Computational Materials Science Center, National Institute for Ma
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HAMADA Tomoyuki
The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo
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OHNO Takahisa
First Principles Simulation Group, Computational Materials Science Center, National Institute for Ma
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YONEDA Katsumi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Minami Akiyuki
Semiconductor Leading Edge Technology Inc.
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Nasuno Takashi
Semiconductor Leading Edge Technology Inc.
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Homma Y
Hitachi Ltd. Tokyo Jpn
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Homma Yoshio
Central Research Laboratory Hitachi Ltd.
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MIYAZAKI Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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Tsujita Koichiro
Semiconductor Leading Edge Technology Inc.
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Takemura Yoshiaki
Advanced Research Laboratory Hitachi Ltd.
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Takemura Yoshiaki
Central Research Laboratory Hitachi Ltd.
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Nakanishi Naruhiko
Semiconductor Development Center Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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Miyazaki H
Osaka Univ. Osaka Jpn
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies Inc.
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Kobayashi Nobuyoshi
Semiconductor Development Center Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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IRIE Ryotaro
Central Research Laboratory, Hitachi, Ltd.
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Irie Ryotaro
Central Research Laboratory Hitachi Ltd.
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Matsubara Yoshihisa
Semiconductor Leading Edge Technology Inc.
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Miyazaki Hiroshi
Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P
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Ohno Takahisa
Science University Of Tokyo
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Tsuda Hiroshi
Semiconductor Leading Edge Technology Inc.
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Nakao Shin-Ichi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Ushio Jiro
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-8505, Japan
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Kato Manabu
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Hamada Tomoyuki
The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503, Japan
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Inaishi Yoshiaki
Taiyo Nippon Sanso Corporation, Toyo Bldg., 1-3-26 Koyama, Shinagawa-ku, Tokyo 142-8558, Japan
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Ohno Takahisa
First Principles Simulation Group, Computational Materials Science Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Ohno Takahisa
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Inoue Minoru
Taiyo Nippon Sanso Corporation, Toyo Bldg., 1-3-26 Koyama, Shinagawa-ku, Tokyo 142-8558, Japan
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Tajima Nobuo
First Principles Simulation Group, Computational Materials Science Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Yoneda Katsumi
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yoneda Katsumi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shinriki Manabu
Taiyo Nippon Sanso Corporation, Toyo Bldg., 1-3-26 Koyama, Shinagawa-ku, Tokyo 142-8558, Japan
著作論文
- Time-Dependent Dielectric Breakdown of Interlevel Dielectrics for Copper Metallization
- Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns(Microelectronic Test Structures)
- SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
- Surface-Reaction-Controlled Tungsten CVD Technology for 0.1-µm Low-Resistive, Encroachment-Free CMOS-FET Applications
- Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
- Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features
- Precise Control of SiO_2 Etching Characteristics Using Mono-Layer Adsorption of HF/H_2O Vapor
- B24-071 Low Dielectric-constant (k
- Ultraviolet-Curing Mechanism of Porous-SiOC
- Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations