Ultraviolet-Curing Mechanism of Porous-SiOC
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概要
- 論文の詳細を見る
Utilizing the structure of porous SiOC determined in our previous study, we investigated a mechanism for improving the properties of porous SiOC film by ultraviolet irradiation (UV curing). The generation of a Si–O–Si cross link from an OH group and its adjacent CH3 group is the primary process in UV curing. This cross-link generation enhances mechanical strength of the material and lowers the dielectric constant. Decrease in the number of CH3 groups and increase in the number of Si–H bonds, both due to UV curing, cause slight increases in mass density and dielectric constant of the film.
- Japan Society of Applied Physicsの論文
- 2007-05-25
著者
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Kobayashi Nobuyoshi
Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Yoneda Katsumi
Semiconductor Leading Edge Technologies Inc. (selete)
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Nakao Shin-Ichi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Ushio Jiro
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-8505, Japan
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Kato Manabu
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503, Japan
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Ohno Takahisa
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Yoneda Katsumi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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