Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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HISAMOTO Digh
Central Research Laboratory, Hitachi, Ltd.
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Kobayashi Nobuyoshi
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Kobayashi Nobuyoshi
Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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NAGAI Ryo
Semiconductor & Integrated Circuits Div., Hitachi, Ltd.
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Hisamoto D
Central Research Laboratory Hitachi Ltd.
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Hisamoto Digh
Central Research Laboratory Hitachi Ltd.
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Kobayashi N
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Umeda Kazunori
Institute Of Mechanical Systems Engineering National Institute Of Advanced Industrial Science And Te
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Umeda Kazunori
Central Research Laboratory Hitachi Ltd.
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Nagai Ryo
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Nakamura Yoshitaka
Semiconductor Development Center, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.,
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Nakamura Yoshitaka
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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