Counter Doped N-Channel MOSFETs : Mobility Improvement and Reverse Short Channel Effect Enhancement

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概要

• 論文の詳細を見る

• Counter doping implantation into the channel region is an effective and attractive technique for lowering the threshold voltage in n-channel metal oxide semiconductor field effect transistors (MOSFETs). There are several important advantages to using counter doping, including improved mobility. However, counter doping is shown here to also enhance the reverse short channel effect (RSCE), which is likely to become a more serious phenomenon in future generations of MOSFETs. This doping profile dependent behavior gives us some physical insight into the underlying mechanism responsible for the RSCE.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Noda Hiromasa

  Central Research Laboratory Hitachi Ltd.

• Umeda Kazunori

  Central Research Laboratory Hitachi Ltd.

• Nagai Ryo

  Central Research Laboratory Hitachi Ltd.

• Ploeg Eri

  Central Research Laboratory, Hitachi Ltd.

• Ploeg Eri

  Central Research Laboratory Hitachi Ltd.

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• Low-Voltage High-Gain 0.2 μm N-Channel Metal Oxide Semiconductor Field Effect Transistors by Channel Counter Doping with Arsenic
• Surface-Reaction-Controlled Tungsten CVD Technology for 0.1-µm Low-Resistive, Encroachment-Free CMOS-FET Applications
• Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
• Counter Doped N-Channel MOSFETs : Mobility Improvement and Reverse Short Channel Effect Enhancement

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