Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si Metal Oxide Semiconductor Field Effect Transistors and its Suppression by Atomic Layer Doping

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概要

• 論文の詳細を見る
• 1994-01-30

著者

• Noda Hiromasa

  Central Research Laboratory Hitachi Ltd.

• NAKAMURA Kaori

  Central Research Laboratory, Hitachi Ltd.

• Nakamura Kaori

  Central Research Laboratory Hitachi Ltd.

• Kimura Shin'ichiro

  Central Research Laboratory Hitachi Ltd.

関連論文

• Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si Metal Oxide Semiconductor Field Effect Transistors and its Suppression by Atomic Layer Doping
• Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs
• Counter Doped N-Channel MOSFETs : Mobility Improvement and Reverse Short Channel Effect Enhancement
• Thermally Enhanced Co-Tunneling of Single Electrons in a Si Quantum Dot at 4.2 K

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