Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-12-15

著者

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• KAWANO Takao

  Radioisotope Center,University of Tsukuba

• Kawano Takao

  Radioisotope Center University Of Tsukuba

• Kawano T

  Osaka Univ. Osaka Jpn

• Moriya T

  Institute Of Material Science University Of Tsukuba

• MORIYA Tsuyoshi

  Institute of Materials Science, University of Tsukuba

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Moriya Tsuyoshi

  Institute Of Material Science University Of Tsukuba

• NAGAI Ryo

  Semiconductor & Integrated Circuits Div., Hitachi, Ltd.

• UMEDA Kazunori

  Central Research Laboratory, Hitachi, Ltd.

• Moriya T

  Tokyo Metropolitan University Graduate School Of Engineering

• Umeda Kazunori

  Central Research Laboratory Hitachi Ltd.

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

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