Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
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概要
- 論文の詳細を見る
Fluorine-related defects in 30-keV BF2+-implanted Si were probed using monoenergetic positron beams. From measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy and those of lifetime spectra of positrons, depth profiles of defects and the species of the defects were determined. For an as-implanted specimen, the major species of the defects below the amorphous region was identified to be divacancies. Upon rapid thermal annealing above 700 °C, solid phase epitaxial growth of the amorphous region started, but no shift of the depth profile of defects detected by the positron annihilation technique was observed. During the regrowth of the amorphous region, vacancy-fluorine complexes were introduced. The complexes between vacancy clusters and fluorine atoms were observed even after 1100 °C annealing.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-03-15
著者
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SUZUKI Ryoichi
Electrotechnical Laboratory
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MIKADO Tomohisa
Electrotechnical Laboratory
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Kawano Takao
Radioisotope Center University Of Tsukuba
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OHDAIRA Toshiyuki
Electrotechnical Laboratory
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
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WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
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Komuro Naoyuki
Institute Of Materials Science University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Ohdaira Toshiyuki
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Mikado Tomohisa
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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