Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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MIKADO Tomohisa
Electrotechnical Laboratory
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Suzuki R
National Institute Of Advanced Industrial Science And Technology
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森 竜雄
Nagoya Univ. Aichi Jpn
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NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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Kudo Jun
Semiconductor Technology Academic Research Center
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HATTORI Nobuyoshi
Semiconductor Technology Academic Research Center
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OGURA Atsushi
Semiconductor Technology Academic Research Center
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MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
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Mikado Tomohisa
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Nishikawa Satoshi
Semiconductor Technology Academic Research Center
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Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
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Mori K
Institute Of Material Science University Of Tsukuba
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Ohgaki Takeshi
National Inst. For Materials Sci.
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Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
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Mikado T
Electrotechnical Laboratory
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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