Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
スポンサーリンク
概要
- 論文の詳細を見る
Positron annihilation was used to probe vacancy-type defects in electroplated Cu fabricated using different electrolytes. Isochronal annealing experiments revealed that the agglomeration of vacancy-type defects in grains was observed below 200 °C and that their concentration started to decrease above 300 °C. The observed annealing stages of the defects agree with those for pure Cu irradiated with light particles such as electrons. The size and concentration of vacancies decreased with decreasing concentrations of residual impurities in Cu films. A decrease in the impurity concentration, however, increased the failure rate of Cu interconnects in a stress-induced voiding test. Thus, void formation related to stress-induced failure can be reduced through the introduction of vacancy clusters into grains.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
-
Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
-
Nakamura Tomoji
Semiconductor Technology Academic Research Center, 17-2 Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, Japan
-
Suzuki Takashi
Semiconductor Technology Academic Research Center, 17-2 Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, Japan
関連論文
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
- Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
- Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy : Instrumentation, Measurement, and Fabrication Technology
- Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Fabrication of Microparticle Layer by Annealing Microparticle/Polymer Composite
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Slow Positron Pulsing System for Variable Energy Positron Lifetime Spectroscopy
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
- Vacancy-Type Defects in Be-Implanted InP
- Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
- Evaluation of SOI Substrates by Positron Annihilation
- Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications)
- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
- Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
- Reversal of UV Sensitivity and Loss Reduction of SiON Microring Resonator by Thermal Annealing
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Reemission of Positrons from Mesh and Powder Moderators
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Study of Interactions of Hf and SiO2 Film for High-$k$ Materials
- Low-$k$ SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
- Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
- Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam