NISHIKAWA Satoshi | Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.

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概要

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著作論文

Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing
Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization
Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
A Novel Clean Ti Salicide Process Using Grooved Gate Structure
Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
MOS Gate Etching Using an Advanced Magnetron Etching System : Etching and Deposition Technology
Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy (Special Issue on Ultra-High-Speed IC and LSI Technology)

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