Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy (Special Issue on Ultra-High-Speed IC and LSI Technology)
スポンサーリンク
概要
- 論文の詳細を見る
SiGe HBTs with doping level inversion, that is, a higher dopant concentration in the base than in the emitter, are realized based on the double-polysilicon self-aligned transistor scheme by means of selective epitaxy performed in a production CVD reactor. The effects of the Ge profile in the base on the transistor performance are explored. The fabricated HBT with a 12-27% graded Ge profile demonstrates a maximum cutoff frequency of 88 GHz, a maximum oscillation frequency of 65 GHz, and an ECL gate delay time of 13.8 ps.
- 社団法人電子情報通信学会の論文
- 1999-03-25
著者
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NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
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Hoga Hiroshi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Fujimaki Hirokazu
Devices Business Group Oki Electric Industry Co. Ltd.
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Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
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Ito S
Faculty Of Engineering Toyo University
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Ito Shuji
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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NAKAMURA Toshiyuki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
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HIJIKATA Yumiko
Devices Business Group, Oki Electric Industry Co., Ltd.
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OKITA Yoshihisa
Devices Business Group, Oki Electric Industry Co., Ltd.
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Nakamura T
Japan Aerospace Exploration Agency (jaxa)
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Hijikata Y
Tokyo Inst. Technol. Yokohama‐shi Jpn
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Okita Yoshihisa
Devices Business Group Oki Electric Industry Co. Ltd.
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